Περίληψη:
Absorption and photoconductivity spectra of thin TlGaS2 layers are used to study tbe fundamental and other transitions of TlGaS2 in the energy region 1.0-3.0 eV and in
the temperature range lo-300 K. One of the peaks resolved by photoconductivity measurements corresponds to the excitonic peak registered in the absorption spectrum
of this compound. The temperature dependence of the critical energy and of the broadening parameter of this excitonic peak are presented. Most of the rest photoconductivity peaks are related to transitions from localized levels to the conduction band.
